pzta 42, pzta 43 oct-14-1999 1 npn silicon high-voltage transistors ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types; pzta 92, pzta 93 (pnp) vps05163 1 2 3 4 type marking pin configuration package pzta 42 pzta 43 pzta 42 pzta 43 1 = b 1 = b 2 = c 2 = c 3 = e 3 = e 4 = c 4 = c sot-223 sot-223 maximum ratings parameter symbol pzta 42 pzta 43 unit collector-emitter voltage v ceo 300 200 v collector-base voltage v cbo 300 200 emitter-base voltage v ebo 6 6 dc collector current i c 500 ma base current i b 100 total power dissipation , t s = 124 c p tot 1.5 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction ambient 1) r thja 72 k/w junction - soldering point r thjs 17 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
pzta 42, pzta 43 oct-14-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 pzta 42 pzta 43 v (br)ceo 300 200 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 pzta 42 pzta 43 v (br)cbo 300 200 - - - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 6 - - collector cutoff current v cb = 200 v, i e = 0 v cb = 160 v, i e = 0 pzta 42 pzta 43 i cbo - - - - 100 100 na collector cutoff current v cb = 200 v, i e = 0 , t a = 150 c v cb = 160 v, i e = 0 , t a = 150 c pzta 42 pzta 43 i cbo - - - - 20 20 a emitter cutoff current v eb = 3 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v h fe 25 40 40 - - - - - - - collector-emitter saturation voltage1) i c = 20 ma, i b = 2 ma pzta 42 pzta 43 v cesat - - - - 0.5 0.4 v base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 1) pulse test: t < 300 s; d < 2%
pzta 42, pzta 43 oct-14-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 10 v, f = 100 mhz f t 70 mhz - - pf collector-base capacitance v cb = 20 v, f = 1 mhz pzta 42 pzta 43 c cb - - - - 3 4 transition frequency f t = f ( i c ) v ce = 10v, f = 100mhz ehp00723 pzta 42/43 10 mhz 10 10 ma f c 10 10 t 555 0123 10 3 2 10 1 5 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehp00722 pzta 42/43 150 w 50 100 ?c 0.2 0.4 0.6 0.8 1.0 1.2 1.6 t as t p tot t t ; as
pzta 42, pzta 43 oct-14-1999 4 permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00320 pzta 42/43 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 tot max tot p dc p p t t p = d t t p t dc current gain h fe = f ( i c ) v ce = 10v ehp00724 pzta 42/43 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555 2 collector cutoff current i cbo = f ( t a ) v cb = 160v ehp00725 pzta 42/43 10 0 ? c a 150 na cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t max typ 5 10 3 collector current i c = f ( v be ) v ce = 10v ehp00726 pzta 42/43 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2
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